F. Chen, J. Gill, et al.
IRPS 2004
The reliability of a stacked via chain stressed under various thermal cycle conditions is described. The chain consists of Cu Dual Damascene metallization with SiLK (trademark of Dow Chemical) as the organic low-k dielectric. Failure analysis indicates that cracks form in the Cu vias during thermal cycle stress. Due to the presence of two failure modes, the thermal cycle statistical behavior is described by a bimodal lognormal failure distribution. The thermal cycle lifetime exhibits a strong dependence on the temperature range and a rather weak dependence on the maximum temperature in the cycle. Evidence of a threshold temperature range below which thermal cycle fails should not occur as well as a correlation between the test structure yield and reliability are also reported.
F. Chen, J. Gill, et al.
IRPS 2004
D.L. Rath, R. Ravikumar, et al.
Diffusion and Defect Data Pt.B: Solid State Phenomena
M.Y. Chern, A. Gupta, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.F. Bringley, B.A. Scott, et al.
Nature