Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
- V. Djara
- Marilyne Sousa
- et al.
- 2015
- Microelectronic Engineering
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71 results for Chiara Marchiori
Oxygenated amorphous carbon for resistive memory applications
- C.A. Santini
- Abu Sebastian
- et al.
- 2015
- Nature Communications
Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films
- Bart Van Bilzen
- P. Homm
- et al.
- 2015
- Thin Solid Films
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
- V. Djara
- Veeresh Deshpande
- et al.
- 2015
- VLSI Technology 2015
Optical nonlinear barium titanate thin films integrated in silicon photonic devices
- Stefan Abel
- Thilo Stöferle
- et al.
- 2015
- CLEO/Europe-EQEC 2015
Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors
- V. Djara
- Lukas Czornomaz
- et al.
- 2015
- EUROSOI-ULIS 2015
Wafer bonding: An integration route for hybrid III-V/SiGe CMOS on 300mm
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- ISSWB 2014
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Nicolas Daix
- Emanuele Uccelli
- et al.
- 2014
- APL Materials
Silicon CMOS compatible transition metal dioxide technology for boosting highly integrated photonic devices with disruptive performance
- Pablo Sanchis
- L. Sánchez
- et al.
- 2014
- ICTON 2014
III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Emanuele Uccelli
- Nicolas Daix
- et al.
- 2014
- ITNG 2014