Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor-to-Sensor Variations and Enhanced Sensing Characteristics
- Sufi Zafar
- Christopher P. D’Emic
- et al.
- 2018
- ACS Nano
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75 results for Christopher P. D’Emic
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs with HfO2 Gate Dielectric on Ultrathin SiON Buffer Layer
- J.-P. Han
- E.M. Vogel
- et al.
- 2004
- IEEE Electron Device Letters
Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
Transient enhanced diffusion and dose loss of indium in silicon
- Omer Dokumaci
- Paul Ronsheim
- et al.
- 1999
- MRS Spring Meeting 1999
STT-MRAM - Status and Outlook
- Daniel C. Worledge
- C. Safranski
- et al.
- 2022
- TMRC 2022
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
SiGe-on-insulator symmetric lateral bipolar transistors
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2015
- S3S 2015