Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks
- Hiroshi Miki
- Naoki Tega
- et al.
- 2010
- IEDM 2010
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75 results for Christopher P. D’Emic
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Reduction of random telegraph noise in high-κ / metal-gate stacks for 22 nm generation FETs
- N. Tega
- H. Miki
- et al.
- 2009
- IEDM 2009
Silicide challenges for 22nm technologies and beyond
- Paul R. Besser
- Christian Lavoie
- et al.
- 2008
- ECS Meeting 2008
Material and integration issues for rare-Earth Silicides as gate and diffusion contacts in advanced CMOS
- C. D'Emic
- K. Ohuchi
- et al.
- 2008
- ECS Meeting 2008
Extendibility of NiPt silicide to the 22-nm node CMOS technology
- Kazuya Ohuchi
- Christian Lavoie
- et al.
- 2008
- IWJT 2008
Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
- C. D'Emic
- J.S. Newbury
- et al.
- 2008
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Measurements of inter-and-intra device transient thermal transport on SOI FETs
- P. Solomon
- M. Shamsa
- et al.
- 2007
- IEDM 2007