Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
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148 results for Jack O. Chu
Free standing silicon as a compliant substrate for SiGe
- G.M. Cohen
- P.M. Mooney
- et al.
- 2003
- MRS Proceedings 2003
Free standing silicon as a compliant substrate for SiGe
- G.M. Cohen
- P.M. Mooney
- et al.
- 2003
- MRS Proceedings 2003
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
- Qiqing Christine Ouyang
- S.J. Koester
- et al.
- 2002
- SISPAD 2002
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
Strain relaxation mechanisms in He+-implanted and annealed Si1-xGex layers on Si(001) substrates
- S. Christiansen
- P.M. Mooney
- et al.
- 2001
- MRS Proceedings 2001
Thermal stability of strained Si on relaxed Si1-xGex buffer layers
- P.M. Mooney
- S.J. Koester
- et al.
- 2001
- MRS Proceedings 2001
Fabrication of a novel vertical pMOSFET with enhanced drive current and reduced short-channel effects and floating body effects
- Q. Ouyang
- X. Chen
- et al.
- 2001
- VLSI Technology 2001