Ultra low contact resistivities for CMOS beyond 10-nm node
- Zhen Zhang
- Siyuranga Obasa Koswatta
- et al.
- 2013
- IEEE Electron Device Letters
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21 results for Adam Pyzyna
Interconnect material choices for future scaled devices
- Gregory Fritz
- Adam Pyzyna
- et al.
- 2012
- ADMETA 2012
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node
- Josephine Chang
- Michael A. Guillorn
- et al.
- 2011
- VLSI Technology 2011
Development and characterization of advanced process technologies for the fabrication of crystalline-Si solar cells
- Satyavolu S. Papa Rao
- Kate Fisher
- et al.
- 2010
- PVSC 2010
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
Hydrogen silsesquioxane-based hybrid electron beam and optical lithography for high density circuit prototyping
- M. Guillorn
- J. Chang
- et al.
- 2009
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009