Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006
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17 results for Kathryn Schonenberg
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Vertical SiGe-base bipolar transistors on CMOS-compatible SOI substrate
- Jin Cai
- Mahender Kumar
- et al.
- 2003
- BCTM 2003
50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs
- Seshadri Subbanna
- Gregory Freeman
- et al.
- 2002
- Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
The stability of Si1-xGex strained layers on small-area trench-isolated silicon
- K. Schonenberg
- Siu-Wai Chan
- et al.
- 1997
- Journal of Materials Research
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
- D. Nguyen-Ngoc
- D.A. Sunderland
- et al.
- 1996
- Applied Surface Science
Si-Ge heterojunction bipolar technology for high-speed integrated circuits
- D. Ahlgren
- M.M. Gilbert
- et al.
- 1996
- Canadian Journal of Physics