Self-aligned carbon nanotube transistors with novel chemical dopingJia ChenChristian Klinkeet al.2004IEDM 2004
Relevance of remote scattering in gate to channel mobility of thin-oxide CMOS devicesPaul M. SolomonMin Yang2004IEDM 2004
High performance and low power transistors integrated in 65nm bulk CMOS technologyZ. LuoA. Steegenet al.2004IEDM 2004
Successful dual damascene integration of extreme low k materials (k < 2.0) using a novel gap fill based integration schemeS.V. NittaS. Purushothamanet al.2004IEDM 2004
Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignmentS.E. Laux2004IEDM 2004
Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETsD. SinghP. Solomonet al.2004IEDM 2004
Selectively formed high mobility strained Ge PMOSFETs for high performance CMOSHulling ShangJack O. Chuet al.2004IEDM 2004
SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 psM. KhaterJ.-S. Riehet al.2004IEDM 2004