Effects of Impurity Compensation on Injection Current in Si Bipolar TransistorsD.D. TangAlwin E. Michel1980IEEE T-ED
Dependence of Electroluminescence Efficiency and Memory Effect on Mn Concentration in ZnS: Mn ACTEL DevicesV. MarrelloAare Onton1980IEEE T-ED
Efficiency Calculations for Thin-Film Polycrystalline Semiconductor p-n Junction Solar CellsConrad LanzaHarold J. Hovel1980IEEE T-ED
Effect of Emitter Contact on Current Gain of Silicon Bipolar DevicesTak H. NingRandall D. Isaac1980IEEE T-ED
TP-A6 The Behavior of Schottky Barriers to GaAs as a function of Annealing TemperatureH.J. HovelC. Lanza1980IEEE T-ED
TP-A1 Fabrication and Properties of Ultrasmall Superconducting StructuresRobert B. LaibowitzRichard F. Vosset al.1980IEEE T-ED
TA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO2 Injectors and a Floating Polycrystalline Silicon Storage LayerD.J. DiMariaK.M. DeMeyeret al.1980IEEE T-ED
MP-B5 Graded or Stepped Insulator MIS Structures (GI-MIS or SI-MIS)D.J. DiMariaD.W. Dong1979IEEE T-ED
1 µm MOSFET VLSI Technology: Part VII—Metal Silicide Interconnection Technology—A Future PerspectiveBilly L. CrowderStanley Zirinsky1979IEEE T-ED