Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have developed a highly sensitive, dry etch resistant, positive resist system that is useful for both E-beam and x-ray lithography. The resist consists of a radiation sensitive poly(olefin sulfone) and a cresol novolac resin together with an appropriate solvent system. The polysulfone sensitizer is a terpolymer of sulfur dioxide, 2-methyl-1-pentene, and one of a variety of methallyl ether derivatives. This terpolymer structure is essential for establishing homogeneous mixing with the cresol novolac resin and for achieving a high glass transition temperature. The synthesis and characterization of the sulfone terpolymers and lithographic evaluation of the resist are presented. © 1988, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Burstein
Ferroelectrics
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B