David Goren, Shlomo Shlafman, et al.
IEEE-SPI 2007
This paper presents a design and modeling methodology of vertical interconnects for three-dimensional integration (3DI) applications. Compact semi-analytical wideband circuit level models have been developed based on explicit expressions. The pronounced frequency dependent silicon substrate induced dispersion and loss effects are considered, as well as skin and proximity effects. The models have been verified against numerical computations (full wave HFSS and quasi-static Q3D solvers). A dedicated test site has been designed for broadband characterization (from 1 MHz up to 110 GHz) of TSVs within a dense farm. © 2011-2012 IEEE.
David Goren, Shlomo Shlafman, et al.
IEEE-SPI 2007
David Goren, Michael Zelikson, et al.
DATE 2002
Xiaoxiong Gu, Joel A. Silberman, et al.
IEEE Transactions on CPMT
Avraham Sayag, Dan Ritter, et al.
IEEE T-MTT