Conference paper
Low-temperature operation of silicon bipolar ECL circuits
J.D. Cressler, D.D. Tang, et al.
ISSCC 1989
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
J.D. Cressler, D.D. Tang, et al.
ISSCC 1989
Keith A. Jenkins, M.J. Immediato, et al.
Scanning
J. Cai, K. Rim, et al.
IEDM 2004
Keith A. Jenkins, J.D. Cressler
IEDM 1988