E. Gusev, C. Cabral Jr., et al.
IEDM 2004
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
E. Gusev, C. Cabral Jr., et al.
IEDM 2004
K.L. Lee, F. Cardone, et al.
IEDM 2003
M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005
K.-L. Lee, M.M. Frank, et al.
VLSI Technology 2006