Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies
- R. Augur
- C. Child
- et al.
- 2012
- Microelectronic Engineering
Publications
146 results for Daniel Edelstein
In situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
Reflow of copper on ruthenium
- C.-C. Yang
- Y. Loquet
- et al.
- 2011
- ADMETA 2011
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Characterization of Cu reflows on Ru
- C.-C. Yang
- P. Flaitz
- et al.
- 2011
- IEEE Electron Device Letters
CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Low-temperature reflow anneals of Cu on Ru
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2011
- IEEE Electron Device Letters
Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
Evaluation of direct cu electroplating on Ru: Feature fill, parametric, and reliability
- C.-C. Yang
- B. Li
- et al.
- 2011
- IEEE Electron Device Letters