Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
A cost effective 28 nm CMOS Interconnect technology is presented for 28 nm node high performance and low power applications. Full entitlement of ultra low-k (ULK) inter-level dielectric is enabled. Copper wiring levels can be combined up to a total of 11 levels. The inter-level dielectric was optimized for low k-value and high strength. The feature profiles were optimized to enable defect-free metallization using conventional tools and processes. High yields and robust reliability were demonstrated. © 2011 Elsevier B.V. All rights reserved.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Advanced Materials
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Chemistry of Materials