Reversing A Decades-Long Scaling Law of Dielectric Breakdown using Hydrogen-Plasma-Treated HfO2 ReRAM Devices
- Ernest Y. Wu
- Takashi Ando
- et al.
- 2023
- Advanced Electronic Materials
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59 results for P. Jamison
A maximum extreme-value distribution model for switching conductance of oxide-RRAM in memory applications
- Ernest Wu
- Takashi Ando
- et al.
- 2020
- Applied Physics Letters
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Reduction of hafnium oxide and hafnium silicate by rhenium and platinum
- M. Copel
- R.P. Pezzi
- et al.
- 2006
- Applied Physics Letters
Electron mobility dependence on annealing temperature of W/HfO 2 gate stacks: The role of the interfacial layer
- A.C. Callegari
- P. Jamison
- et al.
- 2006
- Journal of Applied Physics
Interlayer composition of HfO 2/Si(001) films
- M. Copel
- M.C. Reuter
- et al.
- 2004
- Applied Physics Letters
Thermal stability of polycrystalline silicon/metal oxide interfaces
- A.C. Callegari
- E. Gousev
- et al.
- 2002
- Applied Physics Letters
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Ultrathin nitrided gate dielectrics by plasma-assisted processing
- E. Gusev
- D.A. Buchanan
- et al.
- 1999
- Microelectronic Engineering