Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flow
- D.-G. Park
- Z. Luo
- et al.
- 2004
- VLSI Technology 2004
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60 results for P. Jamison
Interlayer composition of HfO 2/Si(001) films
- M. Copel
- M.C. Reuter
- et al.
- 2004
- Applied Physics Letters
Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
- Katherine L. Saenger
- Cyril Cabral Jr.
- et al.
- 2003
- MRS Proceedings 2003
Device Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
Thermal stability of polycrystalline silicon/metal oxide interfaces
- A.C. Callegari
- E. Gousev
- et al.
- 2002
- Applied Physics Letters
Ultrathin high-K gate stacks for advanced CMOS devices
- E. Gusev
- D.A. Buchanan
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
80 nm poly-silicon gated n-FETs with ultra-thin Al2O3 gate dielectric for ULSI applications
- D.A. Buchanan
- E. Gusev
- et al.
- 2000
- IEDM 2000
Ultrathin nitrided gate dielectrics by plasma-assisted processing
- E. Gusev
- D.A. Buchanan
- et al.
- 1999
- Microelectronic Engineering