Aggressively scaled (0.143 μm 2) 6T-SRAM cell for the 32 nm node and beyond
- D. Fried
- J. Hergenrother
- et al.
- 2004
- IEDM 2004
Publications
Date
Featured collections
Popular topics
53 results for Jim Bucchignano
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Enhancement of KRS-XE for 50 keV advanced mask making applications
- Karen Petrillo
- David Medeiros
- et al.
- 2002
- SPIE Photomask Technology 2002
Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography
- K. Liu
- Ph. Avouris
- et al.
- 2002
- Applied Physics Letters
New polysilicon disposable sidewall process for sub-50 nm CMOS
- K.L. Lee
- D. Boyd
- et al.
- 2001
- ESSDERC 2001
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Extending the performance of KRS-XE for high throughput electron beam lithography for advanced mask making
- David R. Medeiros
- Karen E. Petrillo
- et al.
- 2001
- Proceedings of SPIE - The International Society for Optical Engineering
Very high performance 50 nm CMOS at low temperature
- S.J. Wind
- L.T. Shi
- et al.
- 1999
- IEDM 1999
Observation of magnetic switching in submicron magnetic-tunnel junctions at low frequency
- Y. Lu
- P.L. Trouilloud
- et al.
- 1999
- Journal of Applied Physics
Chemically amplified resist processing with top coats for deep-ultraviolet and e-beam applications
- Karen Petrillo
- James Bucchignano
- et al.
- 1998
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures