L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
We propose a novel method to evaluate the impact of RTN on SRAM, and have demonstrated and proved the RTN effects are indeed present in SRAM by both simulation and experiments. Our results also determine the necessary voltage guard band to prevent SRAM yield loss. © 2011 IEEE.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Shu-Jen Han, Alberto Valdes-Garcia, et al.
IEDM 2011
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
M. Hamaguchi, Deleep R. Nair, et al.
IEDM 2011